Integrated transducer provided with a temperature sensor and method for sensing a temperature of the transducer

ABSTRACT

A pressure sensor includes a body made of semiconductor material having a first type of conductivity and a pressure-sensitive structure having the first type of conductivity defining a suspended membrane. One or more piezoresistive elements having a second type of conductivity (P) are formed in the suspended membrane. The piezoresistive elements form, with the pressure-sensitive structure, respective junction diodes. A temperature sensing method includes: generating a first current between conduction terminals common to the junction diodes; detecting a first voltage value between the common conduction terminals when the first current is supplied; and correlating the detected first voltage value to a value of temperature of the diodes. The temperature value thus calculated can be used for correcting the voltage signal generated at output by the pressure sensor when the latter is operated for sensing an applied outside pressure which deforms the suspended membrane.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional application from U.S. application for patent Ser. No. 13/757,146 filed Feb. 1, 2013, which claims priority from Italian Application for Patent No. TO2012A000145 filed Feb. 17, 2012, the disclosures of which are hereby incorporated by reference.

TECHNICAL FIELD

The present invention relates to a transducer, in particular a piezoresistive pressure sensor, provided with a temperature sensor, and to a method for sensing a temperature of said transducer.

BACKGROUND

Known to the art are micromachining techniques for providing integrated pressure sensors made of semiconductor material. Said sensors present numerous advantages in terms of low cost, high degree of functionality and reliability, good signal-to-noise ratio, integrability with memory circuits to obtain smart sensors, and high reproducibility. Semiconductor pressure microsensors present on the market are essentially based upon two physical effects: the piezoresistive effect, whereby the deflection of a silicon membrane caused by the pressure unbalances a Wheatstone bridge provided with resistances diffused in the membrane; and the capacitive effect, whereby the pressure induces displacement of a membrane that constitutes the mobile electrode of a capacitor (thus determining a variation of capacitance thereof). In what follows only pressure sensors that use the first effect, i.e., piezoresistive sensors, will be considered.

A method of manufacture of a piezoresistive pressure sensor of a known type is described, for example, in European Patent No. 822398 or in European Patent No. 1577656, the disclosures of which are incorporated by reference. The membranes of said sensors, in order to guarantee proper operation, must have a well-controlled homogeneous thickness and moreover must not present intrinsic mechanical stresses (of a tensile and compressive nature). A method of fabrication of a membrane designed for use in piezoresistive pressure sensors is, for example, described in U.S. Pat. No. 7,871,894, the disclosure of which is incorporated by reference.

One of the main disadvantages of piezoresistive pressure sensors is the high thermal drift that they undergo as the temperature varies. In the absence of compensation, a variation of temperature of approximately 10° C. in a piezoresistive pressure sensor can cause a non-negligible drift of the output signal, in particular for applications that require high sensitivity (e.g., medical applications such as artificial breathers, spirometers, altimeters, barometers, etc.). For this reason, it is necessary to equip these sensors with a system for compensation of thermal drift. One of the known methods comprises inserting said sensors in a transduction circuit based upon the Wheatstone bridge. This modality envisages inserting on the opposite branch of the bridge piezoresistive elements that are substantially the same as those mounted on the sensor element, but arranged so as not to undergo deformations linked to the pressure applied to the membrane. As the temperature varies, all the piezoresistors undergo approximately the same thermal drifts. In this way, the elements used for compensation rebalance the Wheatstone bridge, reducing the dependence of the output pressure signal upon the temperature of the transducer.

However, on account of variations of layout of the sensor, variations of morphology of the piezoresistors linked to spreads of the manufacturing process, local concentrations of impurities, and in general other conditions of physical mismatch, also in the case of Wheatstone-bridge connection of the piezoresistors, variations of the pressure signal at output from the bridge are not completely independent of temperature variations of the sensor. A further step of compensation of the variations of the output signal caused by the temperature is consequently necessary. For this purpose, it is necessary to acquire a signal correlated to the temperature to which the piezoresistors are subjected in use. There has consequently been proposed temperature sensors located in the proximity of the pressure sensor, adapted to be used for thermal compensation of the pressure sensor. Said double-sensor systems show a temperature gradient between the temperature sensor and the membrane of the sensor, on account of the different physical location. The time that elapses for stabilization of the temperature gradient is known as “warm-up drift”.

A solution to this problem has, for example, be proposed by Kuo Huan Peng, C. M. Uang, and Yih Min Chang, “The temperature compensation of the silicon piezoresistive pressure sensor using the half-bridge technique”, Proc. SPIE 5343, 292 (2004), the disclosure of which is incorporated by reference. In this document, the output drift of the bridge due to the variation in temperature is minimized by means of auto-gain circuits (AGCs) for adjusting automatically the voltage supplied to the bridge. This solution presents, however, certain disadvantages. In particular, the size of the pressure sensor is considerably increased for housing the temperature-sensing circuit. In addition, a high number of pads are used for biasing correctly both the piezoresistors and the temperature-sensing circuit.

There exists a need in the art to provide a transducer equipped with a temperature sensor, and a method for sensing a temperature of said transducer.

SUMMARY

According to the present invention a transducer equipped with a temperature sensor and a method for sensing a temperature of said transducer are provided.

In an embodiment, a method is presented for sensing a temperature of a transducer. The transducer has a body including a sensing structure of semiconductor material having a first type of conductivity, said sensing structure housing a first transducer element having a second type of conductivity, said first transducer element forming with said sensing structure a first junction diode. The method comprises: generating a first current through said first junction diode; detecting a first voltage value across said first junction diode when the first current is supplied; and correlating said detected first voltage value to a value of a temperature of said first junction diode.

In an embodiment, a transducer comprises: a body including a sensing structure made of semiconductor material having a first type of conductivity; a first transducer element, extending in said sensing structure, having a second type of conductivity, and forming with said sensing structure a first junction diode; a current generator connected between the first transducer element and the sensing structure configured to supply a first current through the first junction diode; a voltage-measuring device connected between the first transducer element and the sensing structure and configured to detecting a first voltage value across the first junction diodes when the first current is supplied; and a processing device configured to acquire the first value of the voltage detected and correlating said first voltage value to a value of temperature of the first junction diode.

In an embodiment, an apparatus comprises: a membrane formed of a first conductivity type semiconductor material; a sensor element within the membrane formed of a second conductivity type semiconductor material; wherein the sensor element and membrane form a junction diode; a first circuit coupled to the sensor element and configured to sense resistive variation of the sensor element in response to deflection of the membrane; and a second circuit coupled to the junction diode and configured to sense a voltage across the junction diode in response to application of a current and determine from the sensed voltage a temperature of the junction diode.

In an embodiment a method comprises: sensing resistive variation of a sensor element in response to deflection of a membrane, said membrane formed of a first conductivity type semiconductor material and said sensor element formed of second conductivity type semiconductor material located within the membrane; wherein the sensor element and membrane form a junction diode; sensing a voltage across the junction diode in response to application of a current; and determining from the sensed voltage a temperature of the junction diode.

BRIEF DESCRIPTION OF THE DRAWINGS

For a better understanding of the present invention, preferred embodiments thereof are now described, purely by way of non-limiting example, with reference to the attached drawings, wherein:

FIG. 1 is a cross-sectional view of a MEMS piezoresistive pressure-sensor device;

FIG. 2 is a cross-sectional view of a MEMS piezoresistive pressure-sensor device;

FIG. 3 shows, in top plan view, a MEMS piezoresistive pressure-sensor device, according to any of the embodiments of FIGS. 1 and 2;

FIG. 4 is an equivalent circuit that represents the Wheatstone-bridge connection of the piezoresistors of the transducer of FIG. 3;

FIG. 5 is an equivalent circuit that illustrates parasitic diodes of the transducer according to any one of the embodiments of FIGS. 1 and 2;

FIG. 6 shows, in top plan view, a MEMS piezoresistive pressure-sensor device coupled to an electrical circuit adapted to bias parasitic diodes of the transducer in order to obtain information regarding the temperature of the transducer;

FIG. 7 shows, in top plan view, the MEMS piezoresistive pressure-sensor device of FIG. 6 coupled to an electrical circuit for reading the voltage across the parasitic diodes, when biased as shown in FIG. 6;

FIG. 8 shows a curve that describes the plot of the voltage across the parasitic diodes of the transducer of FIG. 7 as a function of the temperature;

FIG. 9 shows, in top plan view, a MEMS piezoresistive pressure-sensor device;

FIGS. 10 a and 10 b show an equivalent electrical circuit of parasitic diodes of the transducer of FIG. 9; and

FIG. 11 shows a pressure sensor comprising a MEMS piezoresistive pressure-sensor device.

DETAILED DESCRIPTION OF THE DRAWINGS

The present invention regards a transducer, in particular obtained with MEMS technology, provided with a temperature sensor integrated in the same substrate or body as the one that houses the transducer. According to an embodiment of the present invention, the transducer is a pressure sensor comprising a sensing structure adapted to detect an external pressure applied. The sensing structure is, in particular, a flexible membrane provided with one or more piezoresistors that vary their own value of electrical resistance as a function of the deflection of the membrane when the external pressure is applied.

In what follows, the transducer is designated as a whole by the reference number 100, and is manufactured according to techniques of a known type. Described hereinafter are some steps for manufacturing a pressure sensor provided with a flexible membrane, in which the displacement of the membrane from a resting position to an operative position is detected by using piezoresistors. Application of a pressure P on the membrane causes, as is known, a variation of the value of resistance of the piezoresistors. Said variation of the value of resistance can be associated to an amount of displacement of the membrane, and hence to a value of the pressure P applied.

The steps of fabrication of the transducer 100 are described in what follows with reference to FIG. 1. First of all, a wafer 1 of semiconductor material is provided, having a front side 1 a and a rear side 1 b. The wafer 1 comprises, according to an embodiment, a silicon substrate 2 with doping of an N type and an epitaxial layer 3, which is also made of silicon with doping of an N type. The substrate 2 and the epitaxial layer 3 form, as a whole, a semiconductor body. The semiconductor body can be formed of, or comprise, semiconductor materials different from silicon. Next, provided in the epitaxial layer 3 are piezoresistors 5 (two piezoresistors are shown in cross-sectional view in FIG. 1 a). The piezoresistors 5 are typically formed by means of a step of implantation, in the epitaxial layer 3, of dopant species of a P type, and subsequent process of thermal diffusion.

Next, the wafer 1 is masked so as to cover the rear side 1 b except for an area of the rear side 1 b in which it is desired to form the membrane of the transducer 100. Then, an etch is made of the rear side 1 b of the wafer 1 (for example, an anisotropic etch) so as to remove exposed portions of the substrate 2. Between the substrate 2 and the epitaxial layer 3 there can be provided (in a way not shown in FIG. 1) an etch-stop layer. In this way, etching of the substrate 2 stops at the etch-stop layer and does not proceed towards the epitaxial layer 3. A suspended membrane 6 is thus formed, constituted by portions of the epitaxial layer 3 suspended above the cavity formed in the substrate 2 by means of the previous etching step. The piezoresistors 5 extend into peripheral regions of the suspended membrane 6, in areas corresponding to portions of the latter more subject to stresses when the suspended membrane 6 deflects in use.

According to different embodiments, the suspended membrane 6 can be formed without the need to etch the wafer 1 from the rear side 1 b. Said variant is shown in FIG. 2 in which, formed between the substrate 2 and the epitaxial layer 3, is an interface layer 7, made, for example, of silicon nitride. In general, the interface layer 7 is made of a material that can be selectively removed without damage to the substrate 2 and the epitaxial layer 3. Next, by means of a masked etch, trenches 8 are formed at the front side 1 a of the wafer 1, through the epitaxial layer 3 until the interface layer 7 is reached. A subsequent wet-etching step through the trenches 8 thus formed enables selective removal of portions of the interface layer 7 extending underneath the epitaxial layer 3 to form the suspended membrane 6. The piezoresistors 5 extend in peripheral regions of the suspended membrane 6 thus formed, in areas corresponding to portions of the latter more subject to stress when the suspended membrane 6 deflects in use.

It is evident that other embodiments are possible. In particular, the substrate 2 and the epitaxial layer 3 can be replaced by a SOI (silicon over insulator) substrate.

Irrespective of the way in which the suspended membrane 6 is obtained, electrical-contact pads (not shown in FIGS. 1 and 2) are moreover formed above the epitaxial layer 3 and in electrical contact with each piezoresistor 5. The electrical-contact pads are, for example, made of metal material. The electrical-contact pads can be formed on the wafer 1 at a distance from the respective piezoresistors 5, and electrically connected to the latter by means of conductive paths (which are also, for example, made of metal material). Typically, a dielectric layer extends between the epitaxial layer 3 and the conductive paths in such a way that the latter are electrically insulated from the epitaxial layer 3.

It is thus possible, in use, to bias the piezoresistors 5 so as to provide a Wheatstone-bridge connection (see, for example, FIGS. 3 and 4).

FIG. 3 shows, in top plan view, a suspended membrane 6 provided with four piezoresistors 5. The suspended membrane 6 of FIG. 3 has a circular shape, but other shapes are possible, for example, a quadrangular shape. Two piezoresistors 5 extend aligned to one another along an axis X passing through the centre O of the suspended membrane 6 (i.e., specular with respect to an axis Y passing through the center O of the suspended membrane 6 and orthogonal to the axis X); another two piezoresistors 5 extend aligned to one another along the axis Y passing through the center O of the suspended membrane 6 (i.e., specular with respect to the axis X).

Each piezoresistor 5 has a first conduction terminal 5 a and a second conduction terminal 5 b, and each conduction terminal 5 a, 5 b is electrically coupled to a respective pad formed on the front side 1 a of the wafer 1 (in FIG. 3 said connection is represented by a dashed line). In FIG. 3 the pads are shown schematically and identified by the reference numbers 18 a, 18 b, 20 a, 20 b. Moreover, piezoresistors 5 immediately adjacent to one another along the perimeter of the suspended membrane 6 have a respective conduction terminal 5 a, 5 b electrically coupled to one and the same pad 18 a, 18 b, 20 a, 20 b, in such a way that the four piezoresistors 5 are connected to one another in Wheatstone bridge configuration (see also FIG. 4).

As has been said, the piezoresistors 5 are obtained from regions with a doping of a P type extending in the epitaxial layer 3 of an N type. Each piezoresistor 5 forms, with the epitaxial layer 3, a respective diode (PN junction). In particular, four diodes are present (D1-D4 in FIG. 5), each formed by a respective piezoresistor 5 (P) and by the epitaxial layer 3 (N). The epitaxial layer 3 has the function of conduction terminal 21 common to all the diodes thus formed.

By electrically connecting the pads 18 a, 18 b, 20 a, 20 b to one and the same conduction terminal, all the diodes D1-D4 are connected between the same conduction terminals, and are hence connected together in parallel. Since the diodes D1-D4 thus connected have the conduction terminals in common, they can be viewed as a single equivalent diode D_(eq). The current-voltage (I-V) characteristic of the equivalent diode D_(eq) obtained by connecting in parallel the diodes D1-D4 as the pressure varies does not undergo variations since the variations of the individual diodes D1, D3 and D2, D4 are complementary to one another in current and compensate one another. In other words, as the pressure varies, the I-V characteristic of the equivalent diode D_(eq) can be considered also as “equivalent” to that of a diode of area equal to the sum of the areas of the diodes D1-D4 and a characteristic, with unit area, equal to that obtained from the average of the characteristics of the diodes D1, D3 or of the diodes D2, D4.

The equivalent diode D_(eq) is used as a temperature sensor integrated in the wafer 1, set in the area of the transducer 100 and hence not subject to warm-up drift phenomena.

According to one embodiment, the method for sensing the value of temperature to which the transducer 100 is subject in use, comprises the following steps: supplying a current I_(DIODE)=I₁, having a first known value, to the diodes D1-D4 connected together in parallel as shown in FIG. 5; detecting a voltage value V_(DIODE)=V₁ across the diodes D1-D4 connected in parallel when the current I_(DIODE)=I₁ is supplied; and correlating the voltage value V_(DIODE)=V₁ thus detected to a temperature value (for example, by means of linear association between the voltage value V_(DIODE)=V₁ detected and the temperature value that is to be obtained). The latter correlating step is rendered possible by the fact that the evolution of the voltage across a diode (and equivalently across the diodes D1-D4 connected in parallel) varies according to a known law that depends upon the temperature at which the diode operates. This law is described in what follows (see Eq. (3)).

During use of the diodes D1-D4 as a temperature sensor, the immediate association between a voltage value V_(DIODE) and the temperature at which the diodes D1-D4 operate is obtained using an appropriate correlation function (if we assume that the diodes D1-D4 operate in the linear region, said function is a linear function). This function can be defined by the producer of the pressure sensor, at start of its life, or, alternatively, by the user of the pressure sensor. It is moreover possible to envisage automatic steps of updating of said function to be performed automatically during the service life of the pressure sensor. The method for obtaining said function is described in detail hereinafter (Eqs. (8)-(11b)).

According to a different embodiment, the method described above can be implemented by applying the current I₁ to a single diode chosen from among the diodes D1-D4, and detecting the voltage V₁ across said diode. Alternatively, the method described above can be implemented by applying the current I₁ to a plurality of diodes, connected together in parallel, chosen as subset of the diodes D1-D4 (for example, to just the diodes D1, D2), and detecting the voltage across said diodes.

According to a further embodiment, the method for sensing the value of temperature to which the transducer 100 is subject in use comprises the following steps: supplying a current I_(DIODE)=I₁, having a first known value, to the diodes D1-D4 connected together in parallel as per FIG. 5; detecting a voltage value V_(DIODE)=V₁ across the diodes D1-D4 connected in parallel when the current I_(DIODE)=I₁ is supplied; supplying a second current I_(DIODE)=I₂, having a value different from the value of the first current I_(DIODE)=I₁, to the diodes D1-D4 connected in parallel as per FIG. 5; detecting a second voltage value V_(DIODE)=V₂ across the diodes D1-D4 connected in parallel when the current I_(DIODE)=I₂ is supplied; carrying out an operation of subtraction between the first value and the second value of the voltage detected (i.e., V₁-V₂) obtaining a difference value ΔV_(DIODE); and associating the difference value to a temperature value. This latter associating step is rendered possible by the fact that the evolution of the differential voltage ΔV_(DIODE) across a diode (and equivalently across the diodes D1-D4 connected in parallel) varies with a known law that depends upon the temperature at which the diode operates. This law is described in what follows (see Eq. (6)). According to a different embodiment, also this further embodiment of the method can be implemented by applying the currents I₁, I₂ to a single diode chosen from among the diodes D1-D4, and detecting the voltages V₁, V₂ across said single diode. Alternatively, the same method can be implemented by applying the currents I₁, I₂ to a plurality of diodes, connected together in parallel, chosen as subset of the diodes D1-D4 (for example, to just the diodes D1, D2), and detecting the voltages V₁, V₂ across said diodes.

To understand in greater detail how the equivalent diode D_(eq) is used for measuring the temperature of the wafer 1, some equations describing operation of a diode as temperature sensor are here introduced. The current I_(DIODE) that flows through the equivalent diode D_(eq) when it is biased at a voltage V_(DIODE), is given, as is known, by the following Eq. (1)

$\begin{matrix} {I_{DIODE} = {I_{s}^{\frac{V_{DIODE}}{{nV}_{T}}}}} & (1) \end{matrix}$

where V_(DIODE) is the voltage applied across the equivalent diode, between the terminal 21 and the terminals 18 a, 18 b, 20 a, 20 b; I_(S) is a constant that depends upon a plurality of factors, amongst which the equivalent area of the diode D_(eq) and its temperature (in particular, I_(S)=J_(S)·A_(D), where J_(S) is the charge density, variable with the temperature, and A_(D) is the equivalent area of the diode D_(eq)); and n is the coefficient of emission (constant), which can be approximated with the value 1 in the case of a silicon diode and for low values of current I_(DIODE).

The factor V_(T) in Eq. (1) is the thermal voltage and is given by

$\begin{matrix} {V_{T} = \frac{KT}{q}} & (2) \end{matrix}$

where K is the Boltzman constant; T is the absolute temperature (in degrees Kelvin); and q is the charge of an electron.

A diode biased with a constant current shows, typically, a variation of the voltage across it of the order of approximately −2 mV/° C. This variation is due to the dependence of Eq. (1) upon the temperature; in particular, the term I_(S) varies as the temperature varies doubling its own value every approximately 5° C., whilst the term V_(T) varies according to Eq. (2).

It is evident that the temperature of the diode D_(eq) is linked to the voltage V_(DIODE) that is set up across its conduction terminals. The temperature of the diode D_(eq) can be measured by measuring the voltage V_(DIODE) when flowing through the diode D_(eq) is a current I_(DIODE) of constant value. However, the value obtained from said measurement is subject to a plurality of unforeseeable variations, such as spread of the process of fabrication of the diodes (in particular, spread of the process of fabrication of the epitaxial layer 3, of the piezoresistors 5, etc.). In order to overcome said drawback, it is advisable to measure a differential voltage ΔV_(DIODE) as a function of two different values of constant current that is made to flow through the diode D_(eq).

The ensuing description refers to FIGS. 6 and 7, which show, respectively, the MEMS sensor 100 biased in such a way that through the diode D_(eq) there will flow a desired current (FIG. 6), and the MEMS sensor 100 during detection of the voltage V_(DIODE) across the diode D_(eq) (FIG. 7).

FIG. 6 shows a current generator 27 having a first conduction terminal 27′ electrically coupled to the conductive pad 21 (i.e., to the epitaxial layer 3 or substrate 2), and a second conduction terminal 27″ electrically coupled to the conductive pads 18 a, 18 b, 20 a, 20 b. In this way, the connection in parallel of the diodes D1-D4 shown in FIG. 5 is obtained. The current generator 27 is configured to supply a plurality of current values through the diodes D1-D4. In particular, as will be described more fully in what follows, the current generator 27 supplies to the diodes D1-D4 a first current I₁ and a second current I₂, of values different from one another.

FIG. 7 shows the transducer 100 of FIG. 6 during a different operating step, in particular, during a step of detection of the voltage V_(DIODE) across the diodes D1-D4 (i.e., across the equivalent diode D_(eq), between the terminal 21 and the terminals 18 a, 18 b, 20 a, 20 b; see also FIG. 5). The measurement of the voltage value V_(DIODE) can be made by means of instrumentation 29 of a known type, for example by comparing the voltage V_(DIODE1) with a reference voltage (Vref), storing the output datum (for example, in a DSP), and then comparing V_(DIODE2) with said voltage Vref and calculating the difference ΔV_(DIODE) between them.

The voltage value V_(DIODE) thus measured is then used for subsequent processing operations (for example, performed by a generic integrated circuit 31 or some other data-processing circuit or device). The integrated circuit 31 comprises generic computing means, for example a microcontroller, or other computing means of a known type. The integrated circuit 31 performs the operation described, in what follows, by Eqs. (5) and (6), and, during calibration steps, the operations described by Eqs. (7)-(11b).

There now follows a detailed description of the steps that lead to detection of the temperature by means of the configurations of the transducer 100 shown in FIGS. 6 and 7.

Through the diode D_(eq), a current I_(DIODE)=I₁ is made flow. When the current I₁ flows through it, the voltage V_(DIODE) across the diode D_(eq) can be expressed as

$\begin{matrix} {V_{DIODE} = {V_{1} = {{nV}_{T}{\ln \left( \frac{I_{1}}{I_{s}} \right)}}}} & (3) \end{matrix}$

Then, the current I₁ is removed, and a current I_(DIODE)=I₂ is made to flow through the diode D_(eq). When through the diode D_(eq) a current I_(DIODE)=I₂ flows, the voltage V_(DIODE) can be expressed as

$\begin{matrix} {V_{DIODE} = {V_{2} = {{nV}_{T}{\ln \left( \frac{I_{2}}{I_{S}} \right)}}}} & (4) \end{matrix}$

The values of I₁ and I₂ are chosen, for example, in such a way that I₁=10·I₂. For example, I₁=1 μA and I₂=10 μA. It is evident that other values of I₁ and I₂ can be chosen, also using a different proportion (a factor different from 10) between I₁ and I₂.

The time interval in which the operations of application of the current I₁ and measurement of the voltage V₁ are performed is of the order of hundreds of microseconds. The time interval in which the operations of application of the current I₂ and measurement of the voltage V₂ are performed is of the order of hundreds of microseconds. When the current is applied across the diode, reading of the corresponding voltage is made after a minimum time has elapsed to reach stabilization of the output voltage V_(DIODE).

The differential voltage ΔV_(DIODE) is hence given by Eq. (5)

$\begin{matrix} {{\Delta \; V_{DIODE}} = {{V_{1} - V_{2}} = {{{{nV}_{T}{\ln \left( \frac{I_{1}}{I_{s}} \right)}} - {{nV}_{T}{\ln \left( \frac{I_{2}}{I_{s}} \right)}}} = {{nV}_{T}{\ln \left( \frac{I_{2}}{I_{1}} \right)}}}}} & (5) \end{matrix}$

Expressing the differential voltage ΔV_(DIODE) so as to render explicit the term corresponding to the temperature, we have

$\begin{matrix} {{{\Delta \; V_{DIODE}} = {\alpha \; T}}{where}{\alpha = {n\frac{KT}{q}{\ln \left( \frac{I_{2}}{I_{1}} \right)}}}} & (6) \end{matrix}$

Hence, since the differential voltage ΔV_(DIODE) is proportional to the absolute temperature T of the diode D_(eq), by measuring ΔV_(DIODE) a proportional measurement (with a proportionality factor equal to α) of the temperature at which the diode D_(eq) is found is obtained. Consequently, the value of temperature at which the piezoresistive elements 5 of the transducer 100 are subjected is obtained. With reference to FIG. 7, these operations are performed by the integrated circuit 31.

FIG. 8 shows the plot of ΔV_(DIODE) as a function of the temperature (curve 35). The curve 35 identifies a possible plot of ΔV_(DIODE) and is not limited thereto. The values indicated on the axes are hence provided exclusively by way of example.

The present applicant has verified that the curve 35 of FIG. 8 can be approximated, for the purposes of practical interest, by a linear function 37. In this way, it is possible to take into account an effective value of a different from the theoretical value given previously, and moreover an offset factor β that affects all the measurements of differential voltage ΔV_(DIODE).

Hence, it is assumed that the relation between the differential voltage ΔV_(DIODE) and the temperature T is linear, and is the following

ΔV _(DIODE) =α·T+β  (7)

From a practical standpoint, to calculate α and β, it is possible to proceed as described in what follows. A constant pressure within the range of pressures of use is applied to the suspended membrane 6. For example, considering a range of pressures comprised between approximately 200 mbar and 1300 mbar, a constant pressure is applied to the suspended membrane 6 of approximately 600 mbar. According to a different embodiment, the pressure applied to the suspended membrane 6 is a zero pressure. Then, maintaining the applied pressure constant, the temperature is made to vary. For example, the temperature is made to vary within the temperature range envisaged for use of the transducer 100, for example between −40° C. and +85° C. For example, two temperature values from among 27° C., 40° C., 55° C., and 70° C. are chosen. Thus, the transducer 100 (and hence also the diode D_(eq)) is brought to a first controlled temperature value T_(eq1) (for example, by putting the transducer 100 in an oven at adjustable temperature).

The temperature T_(eq1) is, for example, 27° C. We have

V _(DIODE1a) =α·T _(eq1)+β  (8)

where V_(DIODE1a) is the direct-voltage value measured across D_(eq) at the temperature T_(eq1).

Then, the transducer 100 (and hence also the diode D_(eq)) is brought to a second controlled temperature value T_(eq2)≠T_(eq1). The temperature T_(eq2) is, for example, 55° C. We have

V _(DIODE2a) =α·T _(eq2)+β  (9)

where V_(DIODE2a) is the direct-voltage value measured across D_(eq) at the temperature T_(eq2).

The value of α is given by

α=(V _(DIODE1a) −V _(DIODE2a))/(T _(eq1) −T _(eq2))   (10)

The value of β is given by

β=V _(DIODE1a) −α·T _(eq1)   (11a)

or, equivalently

β=V _(DIODE2a) −α·T _(eq2)   (11b)

What has been described here enables a linear association to be obtained between the voltage and temperature values such as to describe the behavior of the diode D_(eq) in the linear region. It is evident that, if we wish to describe the behavior of the diode D_(eq) outside the linear region, it is possible to determine a quadratic function by measuring a further voltage value V_(DIODE) when a third temperature T_(eq3)≠T_(eq2)≠T_(eq1) is applied to the transducer 100.

In use, the value of temperature T_(eq) to which the diode D_(eq) is subject can be corrected in real time by the integrated circuit 31 using the values α and β thus calculated. Said values are calculated at start of life of the pressure sensor, and are stored in a memory internal to the integrated circuit 31.

According to one embodiment, the steps described for obtaining the temperature at which the transducer 100 is found are performed whenever the transducer 100 must be used for sensing a pressure that acts on the suspended membrane 6. According to a different embodiment, the steps described for obtaining the temperature at which the transducer 100 is found are performed at regular intervals, and not each time the transducer 100 is used.

During the standard operations of the transducer 100, i.e., for sensing a pressure that acts on the suspended membrane 6, the value of temperature T_(eq) detected can be used for correcting the voltage value Vo supplied at output by the transducer 100 itself (output of the Wheatstone bridge, between the terminals 20 a and 20 b of FIGS. 3 and 4), as per the known art. The method of correction of the voltage Vo, in itself known, does not form the subject of the present invention and hence is not described herein.

FIG. 9 shows, in the same top plan view of the transducer 100 as that of FIG. 3, a further embodiment for operation of the diode formed by the PN junction formed by the piezoresistors 5 and by the epitaxial layer 3.

According to this embodiment, two further electrical-contact pads 22 a and 22 b are present.

The pad 22 a is connected to the conduction terminal 5 b of the piezoresistor 5, which, during use for measuring the temperature, forms the diode D2. The pad 22 b is connected to the conduction terminal 5 a of the piezoresistor 5 that, during use for measuring the temperature, forms the diode D1. The remaining electrical-contact pads 18 a, 18 b are unaltered as compared to the embodiment of FIG. 3. The electrical-contact pads 20 a and 20 b are respectively connected, in a way similar to the embodiment of FIG. 3, to the conduction terminals 5 a and 5 b of the piezoresistors 5 that, during use for measuring the temperature, form the diodes D4 and D3, but, unlike what is shown in FIG. 3, in this case the electrical-contact pads 20 a and 20 b are not connected to the diodes D1 and D2.

This configuration enables a first connection in parallel between the diodes D1 and D2 (FIG. 10 a) and a second connection in parallel between the diodes D3 and D4 (FIG. 10 b).

The operations of detection of the temperature are similar to the ones described previously. However, in this case, for carrying out the operations according to Eqs. (1)-(6), two equivalent diodes are available, i.e., the equivalent diode D_(eq) as previously identified and described, plus an equivalent diode D_(eq) _(—) ₂ given by the parallel of D1 and D2, and connected between the terminal 21 and the terminals 18 a, 22 a, 22 b. The equivalent diode D_(eq 2) considered can be, indifferently, the diode given by the parallel of D3 and D4, and connected between the terminal 21 and the terminals 18 b, 20 a, 20 b.

When a current I_(DIODE)=I₁ flows through the diode D_(eq), the voltage V_(DIODE) can be expressed according to the aforementioned Eq. (3) reproduced below for convenience

$V_{DIODE} = {V_{1} = {{nV}_{T}{\ln \left( \frac{I_{1}}{I_{s}} \right)}}}$

When one and the same current I₁ is made to flow through the equivalent diode D_(eq) _(—) ₂, across it there is set up a voltage V_(DIODE) _(—) ₂ that can be expressed as

$\begin{matrix} {V_{{DIODE\_}2} = {V_{1} = {{nV}_{T}{\ln \left( \frac{I_{1}}{I_{{s\_}2}} \right)}}}} & (12) \end{matrix}$

The value of I_(S) _(—) ₂ is different from the value of I_(S) according to Eq. (3), in so far as it corresponds to a diode having an area different from that of the diode D_(eq). The values of V_(DIODE)=V₁ and V_(DIODE) _(—) ₂ are consequently different from one another.

The value of I₁ is chosen, for example, equal to 1 μA, to limit the current consumption. It is evident that other values of I₁ can be chosen, according to the need.

The differential voltage ΔV_(DIODE) is hence, in this case, given by

ΔV _(DIODE) =V ₁ −V _(DIODE) _(—) ₂.

By expressing the differential voltage ΔV_(DIODE) so as to render explicit the term corresponding to the temperature, also in this case there is obtained a value of ΔV_(DIODE) that varies linearly with the temperature.

Consequently, since the differential voltage ΔV_(DIODE) is proportional to the absolute temperature T (common to the diodes D_(eq) and D_(eq) _(—) ₂), by measuring ΔV_(DIODE) a measurement is obtained proportional to the temperature to be measured. Consequently, the value of temperature to which the piezoresistive elements 5 of the MEMS sensor 100 are subjected is obtained.

By applying equations similar to Eqs. (8)-(11b) it is possible to obtain the parameters that describe the variation, assumed linear, of the voltage difference ΔV_(DIODE) with the temperature.

When the MEMS sensor 100 is operated for sensing a pressure applied to the suspended membrane 6, reading of the voltage at output Vo from the Wheatstone bridge requires that the output signal at positive potential Vo⁺ be picked up at the terminals 20 a and 22 a simultaneously and that the output signal at negative potential Vo⁻ be picked up at the terminals 20 b and 22 b simultaneously.

This embodiment presents the advantage, as compared to the one described with reference to FIGS. 5-7, of requiring a single current value (I₁) for carrying out the measurement of the temperature. By choosing a value of current I₁ that is sufficiently low, it is possible to reduce the current consumption. In addition, since a single current generator is used, configured to operate at the same value of current I₁, there are no mismatches that, instead, may be observed in the case of use of different generators or of one and the same generator operated for supplying currents of different value. On the other hand, however, two further conductive pads as compared to the case of FIGS. 3, 6 and 7 are required.

FIG. 11 shows, with a block diagram, a pressure sensor 200 provided with the MEMS sensor 100 and a plurality of blocks for processing the signals Vo and V_(DIODE) (or ΔV_(DIODE)).

The processing blocks comprise a multiplexer (MUX) 202, connected to the MEMS sensor 100, for receiving the output signal Vo of the Wheatstone bridge (voltage signal correlated to the pressure to which the membrane 6 is subjected in use). The multiplexer 202 moreover receives at input a signal correlated to the temperature at which the MEMS sensor 100 operates. According to one embodiment, the multiplexer 202 compares the voltage V_(DIODE1) with the reference voltage Vref, storing the output datum in a digital processor 211 (e.g., a DSP), and then compares the voltage V_(DIODE2) with the same reference voltage Vref for calculating the difference ΔV_(DIODE) thereof.

The output of the multiplexer 202 is supplied to an analog front-end 206, including a low-noise capacitive amplifier, which converts the resistive and non-balanced signal of the MEMS sensor 100 into an analog voltage signal. The output of the analog front-end 206 is supplied to an analog-to-digital converter 208, which converts the analog voltage signal into a digital bitstream. The analog-to-digital converter 208 is coupled to a reconstruction filter 209 (optional), which removes the high-frequency components of the quantized noise present in the digital bitstream and supplies at output digital words at high resolution. The pressure values thus processed can be supplied to a microcontroller 214 by means of an interface circuit 212 (I²C/SPI interface). Moreover present between the reconstruction filter 209 and the interface circuit 212 is the digital processor 211, designed for carrying out operations of temperature compensation, according to steps in themselves known. The values of α and β as previously defined, for calibration of the temperature sensor, can be stored in a nonvolatile memory internal to the DSP 211.

From an examination of the characteristics provided according to the present disclosure the advantages that it affords are evident.

In particular, it enables: a reduction of the warm-up times thanks to in situ reading of the temperature of the pressure sensor; a saving of area using the same MEMS sensor with the dual function of pressure sensor and of temperature sensor, exploiting the integrated diodes already present following upon the step of fabrication and formation of the piezoresistors; finally, according to some embodiments of the present invention, no dedicated pads are necessary in the MEMS sensor so that the area and layout of the sensor remain the same as per the known art.

Finally, it is clear that modifications and variations may be made to the invention described and illustrated herein, without thereby departing from the sphere of protection of the present invention, as defined in the annexed claims.

In particular, the description refers to a wafer 1 that houses the pressure sensor.

However, what has been described can obviously be applied to pressure sensors housed in a chip, or die, i.e., after the operation of dicing of the wafer 1.

In addition, according to other embodiments, the conductivities N and P can be exchanged with one another with respect to what has been described previously. In particular, the piezoresistors can be formed by implanted regions of an N type, and the epitaxial layer 3 and the substrate 2 are of a P type.

Moreover, the present invention is not limited to the embodiment of the suspended membrane described and illustrated herein, but can be applied to any piezoresistive pressure sensor in which the piezoresistors form a PN junction with an underlying layer or substrate.

Finally, the teaching according to the present invention can be applied to any sensor or transducer the output signal of which depends upon the operating temperature of the sensor itself and consequently must be corrected or compensated. 

What is claimed is:
 1. An apparatus, comprising: a membrane formed of a first conductivity type semiconductor material; a sensor element within the membrane formed of a second conductivity type semiconductor material; wherein the sensor element and membrane form a junction diode; a first circuit coupled to the sensor element and configured to sense resistive variation of the sensor element in response to deflection of the membrane; and a second circuit coupled to the junction diode and configured to sense a voltage across the junction diode in response to application of a current, said sensed voltage indicative of a temperature of the junction diode.
 2. The apparatus of claim 1, wherein the current comprises a first current and a second current, and wherein the voltage comprises a corresponding first voltage and second voltage, said second circuit further configured to obtain a difference between the first and second voltages, said difference indicative of the temperature of the junction diode.
 3. The apparatus of claim 1, wherein the sensor element comprises a plurality of sensor elements within the membrane each formed of the second conductivity type semiconductor material, the sensor elements and membrane forming a plurality of junction diodes, wherein the first circuit is coupled to the sensor elements and configured to sense resistive variation of the sensor elements in response to deflection of the membrane; and wherein the second circuit is coupled to the junction diodes and configured to sense a voltage across the junction diodes in response to application of a current, said voltage indicative of a temperature of the junction diodes.
 4. A method, comprising: sensing resistive variation of a sensor element in response to deflection of a membrane, said membrane formed of a first conductivity type semiconductor material and said sensor element formed of second conductivity type semiconductor material located within the membrane; wherein the sensor element and membrane form a junction diode; sensing a voltage across the junction diode in response to application of a current; and determining from the sensed voltage a temperature of the junction diode.
 5. The method of claim 4, wherein the current comprises a first current and a second current, and wherein the voltage comprises a corresponding first voltage and second voltage, said sensing further comprising calculating a difference between the first and second voltages and wherein determining comprises determining from the voltage difference the temperature of the junction diode.
 6. The method of claim 4, wherein the sensor element comprises a plurality of sensor elements within the membrane each formed of the second conductivity type semiconductor material, the sensor elements and membrane forming a plurality of junction diodes, wherein sensing resistive variation comprises sense resistive variation of the sensor elements in response to deflection of the membrane; and wherein sensing the voltage comprises sensing a voltage across the junction diodes in response to application of a current; and wherein determining comprises determining from the sensed voltage a temperature of the plurality of junction diodes.
 7. A method for use with a transducer having a body made of a semiconductor material having a first type of conductivity and including a first resistor transducer element having a second type of conductivity and first and second terminals, said first resistor transducer element forming with said body a first junction diode, the method comprising: sensing a temperature of the transducer by: applying a first current to the first resistor transducer element to pass through said first junction diode; detecting a first voltage value across said first junction diode in response to the first current; and correlating said detected first voltage value to a value of a temperature of said first junction diode; and sensing a change in the transducer from a voltage drop across the first and second terminals of the first resistor transducer element.
 8. The method according to claim 7, further comprising: applying a second current, having a value different from the value of the first current, to pass through said first junction diode; detecting a second voltage value across said first junction diode in response to the second current; carrying out an operation of subtraction between the first and the second voltage values to obtain a difference value; and associating said difference value to said value of temperature of said first junction diode.
 9. The method according to claim 8, wherein associating comprises carrying out a linear association.
 10. The method according to claim 7, wherein said transducer is a pressure sensor, the body forming a flexible membrane, and said first resistive transducer element is a piezoresistor.
 11. A transducer, comprising: a body made of semiconductor material having a first type of conductivity; a first resistor transducer element, extending in said body between first and second terminals, having a second type of conductivity, and forming with said body a first junction diode; a current generator configured to supply a first current through the first junction diode; a voltage-measuring device configured to detect a first voltage value across the first junction diode when the first current is supplied; and a processing device configured to acquire the first voltage value detected and correlate said first voltage value to a value of temperature of the first junction diode, said processing device further configured to detect change in voltage across the first and second terminals of the first resistor transducer element.
 12. The transducer according to claim 11, wherein: the current generator is moreover configured to supply a second current, having a value different from the value of the first current, to the first junction diode; the voltage-measuring device is moreover configured to detect a second voltage value across the first junction diode when the second current is supplied; and the processing device is moreover configured to: acquire the second value of the voltage detected; carry out an operation of subtraction between the first value and the second value of the voltage detected to obtain a difference value; and associate said difference value to said value of temperature of said first junction diode.
 13. The transducer according to claim 11, wherein the processing device is moreover configured to carry out a linear association between the difference value and the temperature value. 